* Super high dense cell design for low RDS(ON). Rugged and reliable. Surface Mount package. PB Free. G1(6) S1(1) G2(4) S2(3) Marking Code 8205 o ABSOLUTE MAXIMUM RATINGS (TA = 25 C unless otherwise noted) Parameter Drain-Source Voltage Gate-Source Voltage Drain Current-Continuous @ TJ = 25 C -Pul
SSS8205
South Sea Semiconductor
208.25 KB
Dual n-channel mosfet.
SSS8205
Dual N-Channel Enhancement Mode MOSFET
Product Summary
VDS (V)
18V
ID (A)
5A
RDS(ON) (m ) Max 25 @VGS = 4.5V 45 @VGS = 2.5V
D1 (2, 5) 1
TSO.
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