TF2301A - P-Channel MOSFET
Shenzhen Tuofeng Semiconductor Technology Co., Ltd TF2301A P-Channel TF2301AMOSFET PRODUCT SUMMARY VDS (V) rDS(on) (W) 0.080 @ VGS = - 4.5 V - 20 0.110 @ VGS = - 2.5 V ID (A) - 2.8 - 2.0 SOT-23/-3L G1 S2 3D ABSOLUTE MAXIMUM RATINGS (TA = 25_C UNLESS OTHERWISE NOTED) Parameter Symbol Limit Drain-Source Voltage Gate-Source Voltage VDS VGS - 20 "8 Continuous Drain Current (TJ = 150_C)b Pulsed Drain Currenta Continuous Source Current (Diode Conduction)b TA= 25_C ID IDM IS - 2.8 -
