8822 - Dual N-Channel MOSFET

Tuofeng Semiconductor

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Datasheet Details

Part number: 8822
Manufacturer: Tuofeng Semiconductor
File Size: 92.50 KB
Datasheet: 8822-TuofengSemiconductor.pdf
Description: Dual N-Channel MOSFET

8822 Product details

Description

The 8822 uses advanced trench technology to provide excellent RDS(ON), low gate charge and operation with gate voltages as low as 1.8V while retaining a 12V VGS(MAX) rating.

Features

VDS (V) = 20V ID = 6 A (VGS = 10V) RDS(ON) < 28mΩ (VGS = 4.5V) RDS(ON) < 38mΩ (VGS = 2.5V) TSSOP-8 Top View D1 D2 D1/D2 S1 S1 G1 1 2 3 4 8 D1/D2 7 S2 6 S2 5 G2 G1 G2 S1 Absolute Maximum Ratings TA=25°C unless otherwise noted Parameter Symbol Drain-Source Voltage VDS Gate-Source Voltage VGS Continuous Drain Current A TA=25°C Pulsed Drain Current B ID IDM TA=25°C Power Dissipation A TA=70°C PD Junction and Storage Temperature Range TJ, TSTG Maximum 20 ±10 6 30 1.5 0.96 -55 to.

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Dual N-Channel MOSFET Tuofeng Semiconductor

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