MAPLST1820-090CF - RF Power Field Effect Transistor
MAPLST1820-090CF Features
* Designed for base station applications in the 1805-1880MHz or 1930-1990MHz Frequency Band. Suitable for GSM, EDGE, TDMA, CDMA, and multi-carrier amplifier applications Q Package Style Typical EDGE performance @ 1880MHz, 26V, Idq=900mA: Q Output Power: 45W Q Power Gain: 13dB (typ.) Q Efficiency: 35
