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MAPLST1617-030CF - RF Power Field Effect Transistor

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Datasheet Details

Part number MAPLST1617-030CF
Manufacturer Tyco Electronics
File Size 230.00 KB
Description RF Power Field Effect Transistor
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www.DataSheet4U.com RF Power Field Effect Transistor LDMOS, 1600 — 1700 MHz, 30W, 28V 5/5/05 Preliminary MAPLST1617-030CF Features Designed for INMARSAT applications in the 1620-1670 MHz frequency band. Typical Two Tone Performance (IMD=-30 dBc): Average Output Power: 15W Gain: 14dB (typ.) Efficiency: 38% (typ.) 10:1 VSWR Ruggedness at 30W, 28V, 1670MHz) Package Style MAPLST1617-030CF Maximum Ratings Parameter Drain—Source Voltage Gate—Source Voltage Total Power Dissipation @ TC = 25 °C Storage Temperature Junction Temperature Symbol VDSS VGS PD TSTG TJ Rating 65 20 97 -40 to +150 +200 Units Vdc Vdc W °C °C Thermal Characteristics Characteristic Thermal Resistance, Junction to Case Symbol RΘJC Max 1.
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