UF28100M - RF MOSFET Power Transistor
UF28100M Features
* N-Channel Enhancement DMOS Structure Lower Capacitances for Broadband Mode Device Transistor, lOOW, 28V UF281 OOM Operation Devices High Saturated Output Power Lower Noise Figure Than Competitive Absolute Maximum Ratings at 25°C pi Power Dissipation JunctionTemperature Storage Temperature Ther
