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UF281OOV - RF MOSFET Power Transistor

Tyco Electronics

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Datasheet Details

Part number	UF281OOV
Manufacturer	Tyco Electronics
File Size	214.53 KB
Description	RF MOSFET Power Transistor
Datasheet	UF281OOV_TycoElectronics.pdf

UF281OOV Product details

Features

l l l l l UF281 OOV v2.00 N-Channel Enhancement DMOS Structure Lower Capacitances Lower &lode Device Operation for Broadband High Saturated Output Power Noise Figure Than Competitive Devices Absolute Maximum Ratings at 25°C I Parameter Drain-Source Voltage Gate-Source Voltage Drain-Source Current ( Symbol V DS V GS ‘DS 1 Rating 65 20 12 250 200 -55 to +150 0.7 ( Units V V A Power Dissipation JunctionTemperature Storage Temperature Thermal Resistance PD TJ T sic 8 IP W “C “C “crw Elec.

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Published: Sep 14, 2005 |