UF28100V - RF MOSFET Power Transistor
UF28100V Features
* l l l l l UF281 OOV v2.00 N-Channel Enhancement DMOS Structure Lower Capacitances Lower &lode Device Operation for Broadband High Saturated Output Power Noise Figure Than Competitive Devices Absolute Maximum Ratings at 25°C I Parameter Drain-Source Voltage Gate-Source Voltage Drain-Source Cur
