UF282OP - RF MOSFET Power Transistor
UF282OP Features
* l l l l l Transistor, 2OW, 28V UF2820P v2.00 N-Channel Enhancement DMOS Structure Lower Capacitances Lower Noise Floor Mode Device Operation for Broadband Common Source Configuration Absolute Maximum Ratings at 25°C Parameter Symbol Rating Units Drain-Source Voltage 1 Gate-Source Voltage Dra