P0260AI Datasheet - UNIKC

P0260AI N-Channel MOSFET

P0260AI N-Channel Enhancement Mode MOSFET PRODUCT SUMMARY V(BR)DSS RDS(ON) 600V 4.6Ω @VGS = 10V ID 2A TO-251 ABSOLUTE MAXIMUM RATINGS (TA = 25 °C Unless Otherwise Noted) PARAMETERS/TEST CONDITIONS SYMBOL LIMITS Drain-Source Voltage VDS 600 Gate-Source Voltage VGS ±30 Continuous Drain Current2 Pulsed Drain Current1 , 2 Avalanche Current3 Avalanche Energy3 TC = 25 °C TC = 100 °C ID IDM IAS EAS 2 1.3 7 2 20 Power Dissipation TC = 25 °C TC = 100 °C PD 50 20 Operating Junction.

P0260AI Datasheet (389.82 KB)