P0260AT Datasheet - UNIKC

P0260AT N-Channel MOSFET

P0260AT N-Channel Enhancement Mode MOSFET PRODUCT SUMMARY V(BR)DSS RDS(ON) 600V 4.4Ω @VGS = 10V ID 2.8A TO-220 ABSOLUTE MAXIMUM RATINGS (TA = 25 °C Unless Otherwise Noted) PARAMETERS/TEST CONDITIONS SYMBOL LIMITS Gate-Source Voltage VGS ±30 Continuous Drain Current2 Pulsed Drain Current1 TC = 25 °C TC = 100 °C ID IDM 2.8 1.8 3.5 Avalanche Energy EAS 5 Power Dissipation TC = 25 °C TC = 100 °C PD 96 38 Operating Junction & Storage Temperature Range TJ, TSTG -55 to 150 UN.

P0260AT Datasheet (311.44 KB)