P0460AI Datasheet - UNIKC

P0460AI N-Channel MOSFET

P0460AI N-Channel Enhancement Mode MOSFET PRODUCT SUMMARY V(BR)DSS RDS(ON) 600V 2Ω @VGS = 10V ID 4A TO-251 ABSOLUTE MAXIMUM RATINGS (TA = 25 °C Unless Otherwise Noted) PARAMETERS/TEST CONDITIONS SYMBOL LIMITS Drain-Source Voltage VDS 600 Gate-Source Voltage VGS ±30 Continuous Drain Current2 Pulsed Drain Current1,2 Avalanche Current3 TC = 25 °C TC = 100 °C ID IDM IAS 4 2.4 20 3 Avalanche Energy3 EAS 45 Power Dissipation TC = 25 °C TC = 100 °C PD 78 31 Operating Junction .

P0460AI Datasheet (448.42 KB)