P0460ATF Datasheet - UNIKC

P0460ATF(S) N-Channel Enhancement Mode MOSFET PRODUCT SUMMARY V(BR)DSS RDS(ON) 600V 2Ω @VGS = 10V ID 4A TO-220F TO-220FS 100% UIS tested ABSOLUTE MAXIMUM RATINGS (TA = 25 °C Unless Otherwise Noted) PARAMETERS/TEST CONDITIONS SYMBOL LIMITS Drain-Source Voltage VDS 600 Gate-Source Voltage VGS ±30 Continuous Drain Current2 Pulsed Drain Current1,2 Avalanche Energy3 TC = 25 °C TC = 100 °C ID IDM EAS 4 2.5 20 20 Power Dissipation TC = 25 °C TC = 100 °C PD 27 11 Operating Junct