P0460BTF Datasheet - UNIKC

P0460BTF N-Channel MOSFET

P0460BTF / P046BTFS N-Channel Enhancement Mode MOSFET PRODUCT SUMMARY V(BR)DSS RDS(ON) ID 600V 2.6Ω @VGS = 10V 4A TO-220F TO-220FS 100% UIS tested ABSOLUTE MAXIMUM RATINGS (TA = 25 °C Unless Otherwise Noted) PARAMETERS/TEST CONDITIONS SYMBOL LIMITS Drain-Source Voltage VDS 600 Gate-Source Voltage VGS ±30 Continuous Drain Current2 Pulsed Drain Current1 TC = 25 °C TC = 100 °C ID 4 1.5 IDM 16 Avalanche Current IAS 4 Avalanche Energy L = 10mH EAS 81 Power Dissipation.

P0460BTF Datasheet (387.88 KB)