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P0470ETF Datasheet - UNIKC

P0470ETF N-Channel MOSFET

P0470ETF / P0470ETFS N-Channel Enhancement Mode MOSFET PRODUCT SUMMARY V(BR)DSS RDS(ON) ID 700V 2.8Ω @VGS = 10V 4A TO-220F TO-220FS ABSOLUTE MAXIMUM RATINGS (TA = 25 °C Unless Otherwise Noted) PARAMETERS/TEST CONDITIONS SYMBOL LIMITS Drain-Source Voltage VDS 700 Gate-Source Voltage VGS ±30 Continuous Drain Current2 Pulsed Drain Current1 Avalanche Current3 Avalanche Energy3 TC = 25 °C TC = 100 °C ID 4 2.6 IDM 16 IAS 2 EAS 20 Power Dissipation TC = 25 °C PD 54 TC =.

P0470ETF Datasheet (827.35 KB)