P0510AT Datasheet - UNIKC

P0510AT N-Channel MOSFET

P0510AT N-Channel Enhancement Mode MOSFET PRODUCT SUMMARY V(BR)DSS RDS(ON) 100V 5.5mΩ @VGS = 10V ID 132A TO-220 ABSOLUTE MAXIMUM RATINGS (TA = 25 °C Unless Otherwise Noted) PARAMETERS/TEST CONDITIONS SYMBOL LIMITS Drain-Source Voltage VDS 100 Gate-Source Voltage VGS ±25 Continuous Drain Current2 Pulsed Drain Current1 TC = 25 °C TC = 100 °C ID IDM 132 83 350 Avalanche Current IAS 36 Avalanche Energy L = 1mH EAS 648 Power Dissipation TC = 25 °C TC = 100 °C PD 192 77 Op.

P0510AT Datasheet (746.90 KB)