P0550BT N-Channel Enhancement Mode MOSFET PRODUCT SUMMARY V(BR)DSS RDS(ON) 500V 1.75Ω @VGS = 10V ID 4.5A TO-220 100% UIS tested ABSOLUTE MAXIMUM RATINGS (TA = 25 °C Unless Otherwise Noted) PARAMETERS/TEST CONDITIONS SYMBOL LIMITS UNITS Drain-Source Voltage Gate-Source Voltage VDS 500 V VGS ±30 Continuous Drain Current2 Pulsed Drain Current1, 2 TC = 25 °C TC = 100 °C ID IDM 4.5 3 A 15 Avalanche Current IAS 5 Avalanche Energy L = 8.7mH EAS 109 mJ Power Dissipation TC =.