P0550EI Datasheet - UNIKC

P0550EI MOSFET

P0550EI N-Channel Enhancement Mode MOSFET PRODUCT SUMMARY V(BR)DSS RDS(ON) 500V 1.55Ω @VGS = 10V ID 5A TO-251 100% UIS tested ABSOLUTE MAXIMUM RATINGS (TA = 25 °C Unless Otherwise Noted) PARAMETERS/TEST CONDITIONS SYMBOL LIMITS Drain-Source Voltage Gate-Source Voltage VDS 500 VGS ±30 Continuous Drain Current2 Pulsed Drain Current1,2 Avalanche Current3 Avalanche Energy3 TC = 25 °C TC = 100 °C ID IDM IAS EAS 5 3.2 20 2.5 31.2 Power Dissipation TC = 25 °C TC = 100 °C Operating .

P0550EI Datasheet (793.00 KB)