P0550BD Datasheet - UNIKC

P0550BD MOSFET

P0550BD N-Channel Enhancement Mode MOSFET PRODUCT SUMMARY V(BR)DSS RDS(ON) 500V 1.75Ω @VGS = 10V ID 4.5A TO-252 100% UIS tested ABSOLUTE MAXIMUM RATINGS (TA = 25 °C Unless Otherwise Noted) PARAMETERS/TEST CONDITIONS SYMBOL LIMITS Drain-Source Voltage VDS 500 Gate-Source Voltage VGS ±30 Continuous Drain Current2 Pulsed Drain Current1 , 2 Avalanche Energy3 TC = 25 °C TC = 100 °C ID IDM EAS 4.5 3 15 31 Power Dissipation TC = 25 °C TC = 100 °C PD 52 20 Operating Junction & S.

P0550BD Datasheet (407.83 KB)