P0550ETFS, P0550ETF Datasheet - UNIKC

P0550ETFS N-Channel MOSFET

P0550ETF / P0550ETFS N-Channel Enhancement Mode MOSFET PRODUCT SUMMARY V(BR)DSS RDS(ON) ID 500V 1.55Ω @VGS = 10V 5A TO-220F TO-220FS ABSOLUTE MAXIMUM RATINGS (TA = 25 °C Unless Otherwise Noted) PARAMETERS/TEST CONDITIONS SYMBOL LIMITS Drain-Source Voltage VDS 500 Gate-Source Voltage VGS ±30 Continuous Drain Current2 Pulsed Drain Current1 Avalanche Current3 Avalanche Energy3 TC = 25 °C TC = 100 °C ID IDM IAS EAS 5 3.2 20 2.5 31.2 Power Dissipation TC = 25 °C PD 32 TC.

P0550ETF-UNIKC.pdf