P0903BKB Datasheet - UNIKC

P0903BKB MOSFET

P0903BKB N-Channel Enhancement Mode MOSFET PRODUCT SUMMARY V(BR)DSS RDS(ON) 30V 9mΩ @VGS = 10V ID 49A PDFN 5 6P ABSOLUTE MAXIMUM RATINGS (TA = 25 °C Unless Otherwise Noted) PARAMETERS/TEST CONDITIONS SYMBOL LIMITS Drain-Source Voltage VDS 30 Gate-Source Voltage VGS ±20 Continuous Drain Current2 Pulsed Drain Current1 TC = 25 °C TC = 100 °C ID IDM 49 31 120 Continuous Drain Current TA = 25 °C TA = 70 °C ID 12 9.8 Avalanche Current IAS 29 Avalanche Energy L = 0.1mH EA.

P0903BKB Datasheet (323.75 KB)