P0903BDA - MOSFET
P0903BDA N-Channel Enhancement Mode MOSFET PRODUCT SUMMARY V(BR)DSS RDS(ON) ID 30V 9mΩ @VGS = 10V 56A TO-252 ABSOLUTE MAXIMUM RATINGS (TA = 25 °C Unless Otherwise Noted) PARAMETERS/TEST CONDITIONS SYMBOL LIMITS Drain-Source Voltage VDS 30 Gate-Source Voltage VGS ±20 Continuous Drain Current Pulsed Drain Current1 TC= 25 °C TC= 100 °C ID 56 35 IDM 160 Avalanche Current IAS 31 Avalanche Energy L=0.1mH EAS 48 Power Dissipation TC= 25 °C TC= 100°C PD 48 19 Junction
