P0903BIS Datasheet - UNIKC

P0903BIS MOSFET

P0903BIS N-Channel Enhancement Mode MOSFET PRODUCT SUMMARY V(BR)DSS RDS(ON) 25V 9.5Ω @VGS = 10V ID 57A TO-251(S) ABSOLUTE MAXIMUM RATINGS (TA = 25 °C Unless Otherwise Noted) PARAMETERS/TEST CONDITIONS SYMBOL LIMITS Drain-Source Voltage VDS 25 Gate-Source Voltage VGS ±20 Continuous Drain Current Pulsed Drain Current1 TC = 25 °C TC = 100 °C ID IDM 57 36 160 Avalanche Current IAS 36 Avalanche Energy L = 0.1mH EAS 67 Power Dissipation TC = 25 °C TC = 100 °C PD 55 21 Oper.

P0903BIS Datasheet (394.97 KB)