P0903BDL Datasheet - UNIKC

P0903BDL MOSFET

P0903BDL N-Channel Enhancement Mode MOSFET PRODUCT SUMMARY V(BR)DSS RDS(ON) ID 25V 9.5mΩ @VGS = 10V 56A TO-252 ABSOLUTE MAXIMUM RATINGS (TA = 25 °C Unless Otherwise Noted) PARAMETERS/TEST CONDITIONS SYMBOL LIMITS Drain-Source Voltage VDS 25 Gate-Source Voltage VGS ±20 Continuous Drain Current Pulsed Drain Current1 TC = 25 °C TC = 100 °C ID 56 35 IDM 160 Avalanche Current IAS 34 Avalanche Energy L = 0.1mH EAS 60 Power Dissipation TC = 25 °C PD 49 TC = 100 °C 2.

P0903BDL Datasheet (431.31 KB)