P0903BDB Datasheet - UNIKC

P0903BDB MOSFET

P0903BDB N-Channel Enhancement Mode MOSFET PRODUCT SUMMARY V(BR)DSS RDS(ON) 30V 9mΩ @VGS = 10V ID 59A TO-252 ABSOLUTE MAXIMUM RATINGS (TA = 25 °C Unless Otherwise Noted) PARAMETERS/TEST CONDITIONS SYMBOL LIMITS Drain-Source Voltage VDS 30 Gate-Source Voltage VGS ±20 Continuous Drain Current Pulsed Drain Current1 TC= 25 °C TC= 100 °C ID IDM 59 37 150 Avalanche Current IAS 28 Avalanche Energy L=0.1mH EAS 39 Power Dissipation TC= 25 °C TC= 100°C PD 54 21 Junction & Stor.

P0903BDB Datasheet (442.32 KB)