P0903BEA Datasheet - UNIKC

P0903BEA MOSFET

P0903BEA N-Channel Enhancement Mode MOSFET PRODUCT SUMMARY V(BR)DSS RDS(ON) ID 30V 9mΩ @VGS = 10V 48A PDFN 3x3P ABSOLUTE MAXIMUM RATINGS (TA = 25 °C Unless Otherwise Noted) PARAMETERS/TEST CONDITIONS SYMBOL LIMITS Drain-Source Voltage VDS 30 Gate-Source Voltage VGS ±20 TC = 25 °C 48 Continuous Drain Current2 TC = 100 °C TA = 25 °C ID 30 13 Pulsed Drain Current1 TA = 70 °C 10 IDM 130 Avalanche Current IAS 30 Avalanche Energy L = 0.1mH EAS 45 TC = 25 °C 33 Po.

P0903BEA Datasheet (549.25 KB)