P092ABD Datasheet - UNIKC

P092ABD N-Channel MOSFET

P092ABD N-Channel Enhancement Mode MOSFET PRODUCT SUMMARY V(BR)DSS RDS(ON) 25V 9.5mΩ @VGS = 10V ID 63A TO-252 ABSOLUTE MAXIMUM RATINGS (TA = 25 °C Unless Otherwise Noted) PARAMETERS/TEST CONDITIONS SYMBOL LIMITS Drain-Source Voltage VDS 25 Gate-Source Voltage VGS ±20 Continuous Drain Current2 Pulsed Drain Current1 TC= 25 °C TC= 100 °C ID IDM 63 40 180 Avalanche Current IAS 29 Avalanche Energy L=0.1mH EAS 42 Power Dissipation TC= 25 °C TC= 100°C PD 65 26 Junction & St.

P092ABD Datasheet (468.26 KB)