P1525ED N-Channel Enhancement Mode MOSFET PRODUCT SUMMARY V(BR)DSS RDS(ON) 250V 275mΩ @VGS = 10V ID 15A TO-252 ABSOLUTE MAXIMUM RATINGS (TA = 25 °C Unless Otherwise Noted) PARAMETERS/TEST CONDITIONS SYMBOL LIMITS Gate-Source Voltage VGS ±20 Continuous Drain Current Pulsed Drain Current1 Avalanche Current TC= 25 °C TC= 100 °C ID IDM IAS 15 9.4 60 7 Avalanche Energy L= 1mH EAS 24.5 Power Dissipation TC= 25 °C TC= 100°C Operating Junction & Storage Temperature Range PD Tj, T.