P1525ETFB Datasheet - UNIKC

P1525ETFB N-Channel MOSFET

P1525ETFB N-Channel Enhancement Mode MOSFET PRODUCT SUMMARY V(BR)DSS RDS(ON) ID 250V 260mΩ @VGS = 10V 15A TO-220F ABSOLUTE MAXIMUM RATINGS (TA = 25 °C Unless Otherwise Noted) PARAMETERS/TEST CONDITIONS SYMBOL LIMITS Drain-Source Voltage VDS 250 Gate-Source Voltage VGS ±20 Continuous Drain Current Pulsed Drain Current1 TC = 25 °C TC = 100 °C ID 15 9.4 IDM 60 Avalanche Current IAS 7.6 Avalanche Energy L = 1mH EAS 29 Power Dissipation TC = 25 °C PD 37 TC = 100 °C.

P1525ETFB Datasheet (786.91 KB)