P7006BL N-Channel Enhancement Mode MOSFET PRODUCT SUMMARY V(BR)DSS RDS(ON) 60V 70mΩ @VGS = 10V ID 3.8A SOT-223 ABSOLUTE MAXIMUM RATINGS (TA = 25 °C Unless Otherwise Noted) PARAMETERS/TEST CONDITIONS SYMBOL LIMITS Gate-Source Voltage VGS ±20 Continuous Drain Current Pulsed Drain Current1，2 Avalanche Current TA = 25 °C TA = 70 °C ID IDM IAS 3.8 3 25 16 Avalanche Energy3 EAS 12.8 Power Dissipation TA = 25 °C TA = 70 °C Operating Junction & Storage Temperature Range PD TJ, Tstg.
