P7004EV P-Channel Enhancement Mode MOSFET PRODUCT SUMMARY V(BR)DSS RDS(ON) -40V 70mΩ @VGS = -10V ID -4A SOP- 08 ABSOLUTE MAXIMUM RATINGS (TA = 25 °C Unless Otherwise Noted) PARAMETERS/TEST CONDITIONS SYMBOL LIMITS Drain-Source Voltage VDS -40 Gate-Source Voltage VGS ±20 Continuous Drain Current Pulsed Drain Current1 TA = 25 °C TA = 70 °C ID IDM -4 -3.2 -20 Avalanche Current IAS -19 Avalanche Energy L = 0.1mH EAS 18 Power Dissipation TA = 25 °C TA = 70 °C PD 1.9 1.2 .