PA210HV Datasheet (UNIKC)

PA210HV, MOSFET

PA210HV Dual N-Channel Enhancement Mode MOSFET PRODUCT SUMMARY V(BR)DSS RDS(ON) 100V 120mΩ @VGS = 10V ID 2.8A SOP- 08 ABSOLUTE MAXIMUM RATINGS (TA = 25 °C Unless Otherwise Noted) PARAMETERS/TEST CONDITIONS SYMBOL LIMITS Drain-Source Voltage VDS 100 Gate-Source Voltage VGS ±20 Continuous Drain Current Pulsed Drain Current1 TA = 25 °C TA = 70 °C ID IDM 2.8 2.3 25 Avalanche Current IAS 25 Avalanche Energy L=0.1mH EAS 31 Power Dissipation TA = 25 °C TA = 70 °C PD 2 1.2