PA210HVA Datasheet - UNIKC

PA210HVA MOSFET

PA210HVA Dual N-Channel Enhancement Mode MOSFET PRODUCT SUMMARY V(BR)DSS RDS(ON) 100V 120mΩ @VGS = 10V ID 2.3A SOP- 08 ABSOLUTE MAXIMUM RATINGS (TA = 25 °C Unless Otherwise Noted) PARAMETERS/TEST CONDITIONS SYMBOL LIMITS Drain-Source Voltage VDS 100 Gate-Source Voltage VGS ±20 Continuous Drain Current Pulsed Drain Current1 TA = 25 °C TA = 70 °C ID IDM 2.3 1.8 20 Avalanche Current IAS 6 Avalanche Energy L= 1mH EAS 18 Power Dissipation TA = 25 °C TA = 70 °C PD 1.5 0.9 J.

PA210HVA Datasheet (422.77 KB)