PK5E4BA N-Channel Enhancement Mode MOSFET PRODUCT SUMMARY V(BR)DSS RDS(ON) ID 30V 9.5mΩ @VGS = 10V 40A PDFN 5X6P ABSOLUTE MAXIMUM RATINGS (TA = 25 °C Unless Otherwise Noted) PARAMETERS/TEST CONDITIONS SYMBOL LIMITS Drain-Source Voltage VDS 30 Gate-Source Voltage VGS ±20 Continuous Drain Current3 Pulsed Drain Current1 TC = 25 °C TC = 100 °C ID 40 25 IDM 120 Continuous Drain Current TA = 25 °C TA= 70 °C ID 14 11 Avalanche Current IAS 21 Avalanche Energy L =0.1mH E.
