PK5E6BA N-Channel Enhancement Mode MOSFET PRODUCT SUMMARY V(BR)DSS RDS(ON) ID 30V 6mΩ @VGS = 10V 52A 100% UIS Tested 100% Rg Tested PDFN 5X6P ABSOLUTE MAXIMUM RATINGS (TA = 25 °C Unless Otherwise Noted) PARAMETERS/TEST CONDITIONS SYMBOL LIMITS UNITS Drain-Source Voltage VDS 30 V Gate-Source Voltage VGS ±25 V Continuous Drain Current4 Pulsed Drain Current1 Continuous Drain Current TC = 25 °C TC = 100 °C ID IDM TA = 25 °C TA= 70 °C ID 52 33 120 A 19 15 Avalanche Curr.
