PV501BA Datasheet (UNIKC) - P-Channel MOSFET

PV501BA, P-Channel MOSFET

PV501BA P-Channel Enhancement Mode MOSFET PRODUCT SUMMARY V(BR)DSS RDS(ON) -30V 7.5mΩ @VGS = -10V ID -12A SOP- 08 ABSOLUTE MAXIMUM RATINGS (TA = 25 °C Unless Otherwise Noted) PARAMETERS/TEST CONDITIONS SYMBOL LIMITS Drain-Source Voltage VDS -30 Gate-Source Voltage VGS ±25 Continuous Drain Current Pulsed Drain Current1 TA = 25 °C TA = 70 °C ID IDM -12 -9.6 -50 Avalanche Current IAS -34 Avalanche Energy L=0.1mH EAS 57.8 Power Dissipation TA = 25 °C TA = 70 °C PD 1.8 1.1