PV510BA Datasheet (UNIKC)

PV510BA, MOSFET

PV510BA N-Channel Enhancement Mode MOSFET PRODUCT SUMMARY V(BR)DSS RDS(ON) 30V 4mΩ @VGS = 10V ID 22A SOP-8 ABSOLUTE MAXIMUM RATINGS (TA = 25 °C Unless Otherwise Noted) PARAMETERS/TEST CONDITIONS SYMBOL LIMITS Drain-Source Voltage VDS 30 Gate-Source Voltage VGS ±20 Continuous Drain Current Pulsed Drain Current1 TA = 25 °C TA = 70 °C ID IDM 22 17 100 Avalanche Current IAS 37 Avalanche Energy L =0.1mH EAS 68 Power Dissipation TA= 25 °C TA =70 °C PD 2.7 1.7 Junction & St