PV516DA Datasheet (UNIKC)

PV516DA, MOSFET

PV516DA Dual N-Channel Enhancement Mode MOSFET PRODUCT SUMMARY V(BR)DSS RDS(ON) 20V 35mΩ @VGS = 4.5V ID 5.4A SOP-8 ABSOLUTE MAXIMUM RATINGS (TA = 25 °C Unless Otherwise Noted) PARAMETERS/TEST CONDITIONS SYMBOL LIMITS Drain-Source Voltage VDS 20 Gate-Source Voltage VGS ±8 Continuous Drain Current Pulsed Drain Current1 TA = 25 °C TA= 70 °C ID IDM 5.4 4.3 15 Avalanche Current IAS 17 Avalanche Energy L =0.1mH EAS 14.4 Power Dissipation TA = 25 °C TA= 70°C PD 1.7 1.1 Oper