PV6A4BA Datasheet - UNIKC

PV6A4BA MOSFET

PV6A4BA N-Channel Enhancement Mode MOSFET PRODUCT SUMMARY V(BR)DSS RDS(ON) 40V 14mΩ @VGS = 10V ID 7.8A SOP-8 ABSOLUTE MAXIMUM RATINGS (TA = 25 °C Unless Otherwise Noted) PARAMETERS/TEST CONDITIONS SYMBOL LIMITS Drain-Source Voltage VDS 40 Gate-Source Voltage VGS ±20 Continuous Drain Current Pulsed Drain Current1 TA = 25 °C TA = 70 °C ID IDM 7.8 6.2 30 Avalanche Current IAS 20 Avalanche Energy L =0.1mH EAS 20 Power Dissipation TA= 25 °C TA =70 °C PD 1.8 1.1 Junction &.

PV6A4BA Datasheet (774.78 KB)