PV6A6BA Datasheet - UNIKC

PV6A6BA MOSFET

PV6A6BA N-Channel Enhancement Mode MOSFET PRODUCT SUMMARY V(BR)DSS RDS(ON) 40V 9mΩ @VGS = 10V ID 10.9A SOP-8 ABSOLUTE MAXIMUM RATINGS (TA = 25 °C Unless Otherwise Noted) PARAMETERS/TEST CONDITIONS SYMBOL LIMITS Drain-Source Voltage VDS 40 Gate-Source Voltage VGS ±20 Continuous Drain Current Pulsed Drain Current1 TA = 25 °C TA = 70 °C ID IDM 10.9 8.7 44 Avalanche Current IAS 31 Avalanche Energy L =0.1mH EAS 48 Power Dissipation TA= 25 °C TA =70 °C PD 2.2 1.4 Junction .

PV6A6BA Datasheet (767.07 KB)