TD304BH Datasheet - UNIKC

TD304BH N-Channel Enhancement Mode MOSFET

TD304BH N-Channel Enhancement Mode MOSFET PRODUCT SUMMARY V(BR)DSS RDS(ON) 30V 9mΩ @VGS = 10V ID 57A TO-252 ABSOLUTE MAXIMUM RATINGS (TA = 25 °C Unless Otherwise Noted) PARAMETERS/TEST CONDITIONS SYMBOL LIMITS Drain-Source Voltage VDS 30 Gate-Source Voltage VGS ±20 Continuous Drain Current Pulsed Drain Current1 TC = 25 °C TC = 100 °C ID IDM 57 37 150 Avalanche Current IAS 29 Avalanche Energy L = 0.1mH EAS 40 Power Dissipation TC = 25 °C TC = 100 °C PD 54 21 Junction .

TD304BH-UNIKC.pdf