TD357EG Datasheet - UNIKC

TD357EG N-Channel MOSFET

TD357EG N-Channel Enhancement Mode MOSFET PRODUCT SUMMARY V(BR)DSS RDS(ON) 30V 6mΩ @VGS = 10V ID 74A TO-252 ABSOLUTE MAXIMUM RATINGS (TA = 25 °C Unless Otherwise Noted) PARAMETERS/TEST CONDITIONS SYMBOL LIMITS Gate-Source Voltage VGS ±20 Continuous Drain Current2 Pulsed Drain Current1 TC = 25 °C TC = 100 °C ID IDM 74 44 130 Avalanche Current IAS 35 Avalanche Energy L = 0.1mH EAS 61.2 Power Dissipation TC = 25 °C TC = 100 °C PD 56 22 Operating Junction & Storage Tempera.

TD357EG-UNIKC.pdf