1N50-CB - N-CHANNEL POWER MOSFET

Datasheet Summary

Description

The UTC 1N50-CB is a high voltage MOSFET and is designed to have better characteristics, such as fast switching time, low gate charge, low on-state resistance and have a high rugged avalanche characteristics.

Features

S.
RDS(ON) < 12Ω @ VGS=10V, ID=0.5A.
Fast switching capability.
Avalanche energy specified.
Improved dv/dt capability, high ruggedness.
SYMBOL 1 SOT-89 1 SOT-223 1 TO-251 1 TO-251S 1 TO-251S2 1 TO-252 1 TO-92.

UTC

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1N50-CB N-CHANNEL POWER MOSFET by UTC - Datasheet Preview — Datasheet preview – 1N50-CB

Datasheet Details

Part number	1N50-CB
Manufacturer	UTC
File Size	287.99 KB
Description	N-CHANNEL POWER MOSFET
Datasheet	1N50-CB Datasheet
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UNISONIC TECHNOLOGIES CO., LTD 1N50-CB Preliminary Power MOSFET 1A, 500V N-CHANNEL POWER MOSFET  DESCRIPTION The UTC 1N50-CB is a high voltage MOSFET and is designed to have better characteristics, such as fast switching time, low gate charge, low on-state resistance and have a high rugged avalanche characteristics. This power MOSFET is usually used at high speed switching applications in power supplies, PWM motor controls, high efficient DC to DC converters and bridge circuits.  FEATURES * RDS(ON) < 12Ω @ VGS=10V, ID=0.

Published: Jan 30, 2020 |