Part number:
2SK209
Manufacturer:
UTC
File Size:
450.68 KB
Description:
Silicon n-channel transistor.
* High breakdown voltage: VGDS=
* 50V
* High input impedance: IGSS=
* 1nA (max) at VGS=
* 30V
* ORDERING INFORMATION Ordering Number Lead Free Halogen Free 2SK209L-xx-AE3-R 2SK209G-xx-AE3-R Note: Pin Assignment: S: Source D: Drain G: Gate Package SOT-23 Pin
2SK209
UTC
450.68 KB
Silicon n-channel transistor.
📁 Related Datasheet
2SK2000-R - Power MOSFET
(Fuji Electric)
.
2SK2002-01M - N-Channel MOSFET Transistor
(Inchange Semiconductor)
isc N-Channel MOSFET Transistor
DESCRIPTION ·Drain Current –ID= 3A@ TC=25℃ ·Drain Source Voltage-
: VDSS=600V(Min) ·Fast Switching Speed ·Minimum Lot.
2SK2002-01MR - N-channel MOS-FET
(Fuji Electric)
2SK2002-01MR
FAP-IIA Series
> Features
High Speed Switching Low On-Resistance No Secondary Breakdown Low Driving Power High Voltage VGS = ± 30V Guaran.
2SK2003-01M - N-Channel MOSFET Transistor
(Inchange Semiconductor)
isc N-Channel MOSFET Transistor
DESCRIPTION ·Drain Current –ID= 4A@ TC=25℃ ·Drain Source Voltage-
: VDSS=600V(Min) ·Fast Switching Speed ·Minimum Lot.
2SK2003-01MR - N-channel MOS-FET
(Fuji Electric)
2SK2003-01MR
FAP-IIA Series
> Features
High Speed Switching Low On-Resistance No Secondary Breakdown Low Driving Power High Voltage VGS = ± 30V Guaran.
2SK2004-01L - N-channel MOS-FET
(Fuji Electric)
2SK2004-01L,S
FAP-IIA Series
> Features
High Speed Switching Low On-Resistance No Secondary Breakdown Low Driving Power High Voltage VGS = ± 30V Guara.
2SK2004-01S - N-channel MOS-FET
(Fuji Electric)
2SK2004-01L,S
FAP-IIA Series
> Features
High Speed Switching Low On-Resistance No Secondary Breakdown Low Driving Power High Voltage VGS = ± 30V Guara.
2SK2007 - Silicon N-Channel MOS FET
(Hitachi Semiconductor)
2SK2007
Silicon N-Channel MOS FET
Application
High speed power switching
Features
• • • • • Low on-resistance High speed switching Low drive current.
