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2SK2090 - N-Channel MOS FET

Features

  • Gate can be driven by 2.5 V.
  • Because of its high input impedance, there’s no need to consider drive current 0.3 Marking 0.9 ±0.1 Marking: G22.

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Datasheet preview – 2SK2090

Datasheet Details

Part number 2SK2090
Manufacturer NEC
File Size 59.57 KB
Description N-Channel MOS FET
Datasheet download datasheet 2SK2090 Datasheet
Additional preview pages of the 2SK2090 datasheet.

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Full PDF Text Transcription

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DATA SHEET MOS FIELD EFFECT TRANSISTOR 2SK2090 N-CHANNEL MOS FET FOR HIGH-SPEED SWITCHING The 2SK2090 is an N-channel vertical MOS FET. Because it can be driven by a voltage as low as 2.5 V and it is not necessary to consider a drive current, this FET is ideal as an actuator for low-current portable systems such as headphone stereos and video cameras. PACKAGE DIMENSIONS (in mm) 2.1 ±0.1 1.25 ±0.1 2.0 ±0.2 0.3 +0.1 –0 0.65 0.65 G FEATURES • Gate can be driven by 2.5 V • Because of its high input impedance, there’s no need to consider drive current 0.3 Marking 0.9 ±0.1 Marking: G22 EQUIVALENT CURCUIT Drain (D) Gate (G) Gate protection diode Source (S) Internal diode 0 to 0.
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