2SK2090 Datasheet, Fet, NEC

2SK2090 Features

• Fet
• Gate can be driven by 2.5 V
• Because of its high input impedance, there’s no need to consider drive current 0.3 Marking 0.9 ±0.1 Marking: G22 EQUIVALENT CURCUIT

PDF File Details

Part number:

2SK2090

Manufacturer:

NEC

File Size:

59.57kb

Download:

📄 Datasheet

Description:

N-channel mos fet.

2SK2090 Application

• Applications of a device depend on its quality grade, as indicated below. Customers must check the quality grade of each device before using it in a

TAGS

2SK2090

NEC

📁 Related Datasheet

2SK209 - N-Channel MOSFET (Toshiba Semiconductor)
.

2SK209 - SILICON N-CHANNEL TRANSISTOR (UTC)
UNISONIC TECHNOLOGIES CO., LTD 2SK209 JFET FIELD EFFECT TRANSISTOR SILICON N-CHANNEL JUNCTION TYPE  DESCRIPTION The UTC 2SK209 is an N-channel ju.

2SK2091 - N-Channel MOSFET (Sanyo Semicon Device)
.

2SK2094 - Small switching Transistors (Rohm)
Transistors Small switching (60V, 2A) 2SK2094 FFeatures 1) Low on-resistance. 2) Fast switchig speed. 3) Wide SOA (safe operating area). 4) Low-volta.

2SK2095N - Small switching Transistors (Rohm)
Transistors Small switching (60V, 10A) 2SK2095N FFeatures 1) Low on-resistance. 2) Fast switching speed. 3) Wide SOA (safe operating area). 4) Easily.

2SK2096 - Silicon N-Channel MOSFET (Hitachi Semiconductor)
2SK2096 Silicon N-Channel MOS FET Application High speed power switching Features • • • • • • Low on-resistance High speed switching Low drive curre.

2SK2096 - Silicon N-Channel MOSFET (Renesas)
2SK2096 Silicon N Channel MOS FET Application High speed power switching Features • Low on-resistance • High speed switching • Low drive current • 4 V.

2SK2097 - Silicon N-Channel MOS FET (Hitachi Semiconductor)
2SK2097 Silicon N-Channel MOS FET Application High speed power switching Features • • • • • Low on-resistance High speed switching Low drive current.

2SK2098-01MR - N-channel MOS-FET (Fuji Electric)
2SK2098-01MR FAP-III Series > Features High Current Low On-Resistance No Secondary Breakdown Low Driving Power High Forward Transconductance Avalanche.

2SK2099-01L - N-channel MOS-FET (Fuji Electric)
2SK2099-01L,S FAP-IIA Series > Features High Speed Switching Low On-Resistance No Secondary Breakdown Low Driving Power High Voltage VGS = ± 30V Guara.