Datasheet Summary
DATA SHEET
MOS FIELD EFFECT TRANSISTOR
N-CHANNEL MOS FET FOR HIGH-SPEED SWITCHING
The 2SK2109 is a N-channel MOS FET of a vertical type and is a switching element that can be directly driven by the output of an IC operating at 5 V. This product has a low ON resistance and superb switching and DC/DC converters. characteristics and is ideal for driving the actuator, such as motors
PACKAGE DIMENSIONS (in mm)
4.5 ± 0.1 1.6 ± 0.2
2.5 ± 0.1 4.0 ± 0.25
1.5 ± 0.1
0.8 MIN.
S 0.42 ±0.06
Features
- Low ON resistance RDS(on) = 1.0 Ω MAX. @VGS = 4.0 V, ID = 0.3 A
- High switching speed ton + toff < 100 ns
- Low parasitic capacitance
0.42 0.47 ±0.06 1.5 ±0.06 3.0
0.41+0.03
-...
