F80NM60Z Datasheet, Mosfet, UTC

F80NM60Z Features

• Mosfet
• RDS(ON) ≤ 35 mΩ @ VGS=10V, ID=40A
• Fast body diode MOSFET technology
• Low switching losses due to reduced Qrr
• Single Pulse Avalanche Energy Rated <

PDF File Details

Part number:

F80NM60Z

Manufacturer:

UTC

File Size:

628.21kb

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📄 Datasheet

Description:

N-channel mosfet. The UTC F80NM60Z is an N-channel enhancement mode silicon-gate power MOSFET with fast body diode and ESD Type, designed for high-volt

F80NM60Z Application

• Applications such as fast switching time, low gate charge, low on-state resistance and high rugged avalanche characteristics.
• FEATURES

TAGS

F80NM60Z

UTC

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