F80NM60Z - N-CHANNEL MOSFET

UTC

F80NM60Z Datasheet Preview — Preview of F80NM60Z PDF

Datasheet Details

Part number	F80NM60Z
Manufacturer	UTC
File Size	628.21 KB
Description	N-CHANNEL MOSFET
Datasheet	F80NM60Z-UTC.pdf

F80NM60Z Product details

Description

The UTC F80NM60Z is an N-channel enhancement mode silicon-gate power MOSFET with fast body diode and ESD Type, designed for high-voltage, high-speed power switching applications.

Features

S.
RDS(ON) ≤ 35 mΩ @ VGS=10V, ID=40A.
Fast body diode MOSFET technology.
Low switching losses due to reduced Qrr.
Single Pulse Avalanche Energy Rated.
Fast Switching Speeds.
Linear Transfer Characteristics.
High Input Impedance.
Avalanche energy tested.
SYMBOL Power MOSFET.

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Published: Oct 20, 2023 |