F80NM60Z Datasheet (UTC) - N-CHANNEL MOSFET

F80NM60Z, N-CHANNEL MOSFET

The UTC F80NM60Z is an N-channel enhancement mode silicon-gate power MOSFET with fast body diode and ESD Type, designed for high-voltage, high-speed power switching applications.

such as fast switching time, low gate charge, low on-state resistance and high rugged avalanche characteristics.

* FE

F80NM60Z Features

* RDS(ON) ≤ 35 mΩ @ VGS=10V, ID=40A

* Fast body diode MOSFET technology

* Low switching losses due to reduced Qrr

* Single Pulse Avalanche Energy Rated

* Fast Switching Speeds

* Linear Transfer Characteristics

* High Input Impedance

* Avalanche energy tested

* SYM