MMBTA45 - (MMBTA44 / MMBTA45) HIGH VOLTAGE TRANSISTOR NPN EPITAXIAL SILICON TRANSISTOR
MMBTA45 Features
* Collector-Emitter voltage: VCEO=400V (UTC MMBTA44) VCEO=350V (UTC MMBTA45)
* Collector current up to 300mA
* Complement to UTC MMBTA94/93
* Power Dissipation: PD(max)=350mW 3 NPN EPITAXIAL SILICON TRANSISTOR 1 2 MARKING (MMBTA44) SOT-23 3D
* Pb-free plating product number: MMB