UT2312H - N-CHANNEL POWER MOSFET

UTC

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Datasheet Details

Part number: UT2312H
Manufacturer: UTC
File Size: 394.04 KB
Datasheet: UT2312H-UTC.pdf
Description: N-CHANNEL POWER MOSFET

UT2312H Product details

Description

The UT2312H uses advanced trench technology to provide excellent RDS(ON), low gate charge and operation with low gate voltages.This device is suitable for use as a load switch or in PWM applications.

Features

S.
RDS(ON) ≤ 55 mΩ @ VGS =4.5V, ID =5.0 A.
RDS(ON) ≤ 85 mΩ @ VGS =2.5 V, ID =4.0 A.
Advanced trench process technology.
Excellent thermal and electrical capabilities.
High density cell design for ultra low on-resistance.
SYMBOL 3.Drain Power MOSFET 3 2 1 SOT-23-3 (JEDEC TO-236) 1.Gate 2.Source.

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Published: Nov 18, 2023 |