UT2312H N-CHANNEL POWER MOSFET

UTC

Description

UNISONIC TECHNOLOGIES CO., LTD UT2312H 5A, 20V N-CHANNEL ENHANCEMENT MODE MOSFET * .
The UT2312H uses advanced trench technology to provide excellent RDS(ON), low gate charge and operation with low gate voltages.

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Datasheet Specifications

Part number: UT2312H
Manufacturer: UTC
File Size: 394.04 KB
Datasheet: UT2312H-UTC.pdf
Description: N-CHANNEL POWER MOSFET

Features

* RDS(ON) ≤ 55 mΩ @ VGS =4.5V, ID =5.0 A
* RDS(ON) ≤ 85 mΩ @ VGS =2.5 V, ID =4.0 A
* Advanced trench process technology
* Excellent thermal and electrical capabilities
* High density cell design for ultra low on-resistance
* SYMBOL 3.Drain Power MOSFET 3 2 1 SOT-23-3 (JEDEC

UT2312H Distributors

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UT2312H N-CHANNEL POWER MOSFET UTC

UTC UT2312H-like datasheet