UT2312 N-CHANNEL MOSFET

Unisonic Technologies

Description

UNISONIC TECHNOLOGIES CO., LTD UT2312 5A, 20V N-CHANNEL ENHANCEMENT MODE MOSFET * .
The UT2312 uses advanced trench technology to provide excellent RDS(ON), low gate charge and operation with low gate voltages.

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Datasheet Specifications

Part number: UT2312
Manufacturer: Unisonic Technologies
File Size: 221.46 KB
Datasheet: UT2312_UnisonicTechnologies.pdf
Description: N-CHANNEL MOSFET

Features

* RDS(ON) ≤ 33 mΩ @ VGS =4.5V, ID =5.0 A
* RDS(ON) ≤ 40 mΩ @ VGS =2.5 V, ID =4.0 A
* Advanced trench process technology
* Excellent thermal and electrical capabilities
* High density cell design for ultra low on-resistance
* SYMBOL Power MOSFET
* ORDERING INFORMATION O

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UT2312 N-CHANNEL MOSFET Unisonic Technologies

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